APTGLQ100A120T3AG APTGLQ100A120T3AG C rev 1 december, 2014 www.microsemi.com 1-6 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings (per igbt) these devices are se nsitive to electrostatic discharge. prope r handling procedures should be follo wed. see application note apt0502 on www.microsemi.com 29 13 30 31 32 r1 23 22 2825 27 26 7 8 3 4 18 16 20 19 14 1615 18 20 23 22 13 11 12 14 87 2930 28 27 26 3 32 31 10 19 2 25 4 pins 29/30/31/32 must be shorted together pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg pins 16/18/19/20 must be shorted together symbol parameter max ratings unit v ces collector - emitter voltage 1200 v i c continuous collector current t c = 25c 185 a t c = 100c 100 i cm pulsed collector current t c = 25c 375 v ge gate C emitter voltage 20 v p d maximum power dissipation 650 w rbsoa reverse bias safe operating area t j = 150c 200a @ 1100v application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? high speed trench + field stop igbt 4 technology - low voltage drop - low leakage current - low switching losses - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring ? aln substrate for improved thermal performance benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive tc of vcesat ? each leg can be easily paralleled to achieve a phase leg of twice the current capability ? rohs compliant phase leg high speed trench + field stop igbt4 power module v ces = 1200v i c = 100a @ tc = 100c downloaded from: http:///
APTGLQ100A120T3AG APTGLQ100A120T3AG C rev 1 december, 2014 www.microsemi.com 2-6 electrical characteristics (per igbt) symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 50 a v ce(sat) collector emitter saturation voltage v ge =15v i c = 100a t j = 25c 1.7 2.05 2.4 v t j = 150c 2.6 v ge ( th ) gate threshold voltage v ge = v ce , i c = 3.8 ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 150 na dynamic characteristics (per igbt) symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 6150 pf c oes output capacitance 350 c res reverse transfer capacitance 300 q g gate charge v ge = 15v, i c = 100a v ce = 960v 450 nc t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 600v i c = 100a r g = 5 30 ns t r rise time 57 t d(off) turn-off delay time 290 t f fall time 16 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v bus = 600v i c = 100a r g = 5 30 ns t r rise time 49 t d(off) turn-off delay time 366 t f fall time 48 e on turn on energy v ge = 15v v bus = 600v i c = 100a r g = 5 t j = 25c 7.7 mj t j = 150c 9 e off turn off energy t j = 25c 2.9 t j = 150c 5.4 i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 150c 350 a r thjc junction to case thermal resistance 0.23 c/w diode ratings and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 1200 v i rm reverse leakage current v r =1200v 150 a i f dc forward current tc = 80c 120 a v f diode forward voltage i f = 120a 2.6 3 v i f = 240a 3 i f = 120a t j = 125c 1.8 t rr reverse recovery time i f = 120a v r = 800v di/dt = 400a/s t j = 25c 265 ns t j = 125c 350 q rr reverse recovery charge t j = 25c 1120 nc t j = 125c 5780 r thjc junction to case thermal resistance 0.37 c/w downloaded from: http:///
APTGLQ100A120T3AG APTGLQ100A120T3AG C rev 1 december, 2014 www.microsemi.com 3-6 temperature sensor ntc (see application note apt0406 on www.microsemi.com). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ?? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g package outline (dimensions in mm) see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGLQ100A120T3AG APTGLQ100A120T3AG C rev 1 december, 2014 www.microsemi.com 4-6 typical performance curve t j =25c t j =150c 0 50 100 150 200 0.5 1 1.5 2 2.5 3 3.5 4 i c (a) v ce (v) output characteristics (v ge =15v) v ge =9v v ge =13v v ge =15v v ge =20v 0 50 100 150 200 0123456 i c (a) v ce (v) output characteristics t j = 150 c t j =25c t j =150c 0 50 100 150 200 56789101112 i c (a) v ge (v) transfert characteristics eon eoff 0 5 10 15 20 25 30 0 50 100 150 200 e (mj) i c (a) energy losses vs collector current v ce = 600v v ge = 15v r g = 5 ? t j = 150 c eon eoff 2.5 5 7.5 10 12.5 15 2.5 5 7.5 10 12.5 15 e (mj) gate resistance (ohms) v ce = 600v v ge =15v i c = 100a t j = 150 c switching energy losses vs gate resistance 0 50 100 150 200 250 0 300 600 900 1200 i c (a) v ce (v) reverse bias safe operating area v ge =15v t j =1 50 c r g =5 ? d = 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.04 0.08 0.12 0.16 0.2 0.24 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pul se duration igbt downloaded from: http:///
APTGLQ100A120T3AG APTGLQ100A120T3AG C rev 1 december, 2014 www.microsemi.com 5-6 hard switching zcs zvs 0 40 80 120 160 200 0 50 100 150 200 fm ax, operating frequency (khz) i c (a) v ce =600v d=50% r g =5 ? t j =150c t c =75c operating frequency vs collector current d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal im pedance (c/w) rectangular pulse duration (seconds) m axim um effective transient thermal impedance, junction to case vs pulse durati on diode t j =25c t j =125c 0 40 80 120 160 200 240 0 0.8 1.6 2.4 3.2 i f (a) v f (v) forw ard characteristic of diode downloaded from: http:///
APTGLQ100A120T3AG APTGLQ100A120T3AG C rev 1 december, 2014 www.microsemi.com 6-6 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclai ms any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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